物料参数
Number of channels: | 4 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 40 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 2.7 |
Rail-to-rail: | In, Out |
GBW (typ) (MHz): | 4.5 |
Slew rate (typ) (V/µs): | 21 |
Vos (offset voltage at 25°C) (max) (mV): | 0.895 |
Iq per channel (typ) (mA): | 0.56 |
Vn at 1 kHz (typ) (nV√Hz): | 10.8 |
Rating: | Space |
Operating temperature range (°C): | -55 to 125 |
Offset drift (typ) (µV/°C): | 0.3 |
Features: | EMI Hardened, High Cload Drive, MUX Friendly, Small Size |
CMRR (typ) (dB): | 130 |
Iout (typ) (A): | 0.075 |
Architecture: | CMOS |
Radiation, TID (typ) (krad): | 30 |
Radiation, SEL (MeV·cm2/mg): | 43 |
Input common mode headroom (to negative supply) (typ) (V): | -0.01 |
Input common mode headroom (to positive supply) (typ) (V): | 0.01 |
Output swing headroom (to negative supply) (typ) (V): | 0.025 |
Output swing headroom (to positive supply) (typ) (V): | -0.025 |
Number of channels: | 4 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 40 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 2.7 |
Rail-to-rail: | In, Out |
GBW (typ) (MHz): | 4.5 |
Slew rate (typ) (V/µs): | 21 |
Vos (offset voltage at 25°C) (max) (mV): | 0.895 |
Iq per channel (typ) (mA): | 0.56 |
Vn at 1 kHz (typ) (nV√Hz): | 10.8 |
Rating: | Space |
Operating temperature range (°C): | -55 to 125 |
Offset drift (typ) (µV/°C): | 0.3 |
Features: | EMI Hardened, High Cload Drive, MUX Friendly, Small Size |
CMRR (typ) (dB): | 130 |
Iout (typ) (A): | 0.075 |
Architecture: | CMOS |
Radiation, TID (typ) (krad): | 30 |
Radiation, SEL (MeV·cm2/mg): | 43 |
Input common mode headroom (to negative supply) (typ) (V): | -0.01 |
Input common mode headroom (to positive supply) (typ) (V): | 0.01 |
Output swing headroom (to negative supply) (typ) (V): | 0.025 |
Output swing headroom (to positive supply) (typ) (V): | -0.025 |
无库存